IndiumV3, Main, Repository, bibRecord, 001988

Indium oxide co-doped with tin and zinc: A simple route to highly conducting high density targets for TCO thin-film fabrication

Identifieur interne : 001988 ( Main/Repository ); précédent : 001987; suivant : 001989

Indium oxide co-doped with tin and zinc: A simple route to highly conducting high density targets for TCO thin-film fabrication

Auteurs : RBID : Pascal:12-0319956

Descripteurs français

Pascal (Inist)
- Oxyde d'indium, Addition indium, Oxyde d'étain, Addition cobalt, Zinc, Densité élevée, Couche mince, Frittage, Pulvérisation irradiation, Dépôt pulvérisation, Couche mince transparente, Pressage froid, Pressage chaud, Optimisation, Addition étain, Limite solubilité, Addition zinc, Codopage, Solution solide, Résistivité électrique, Conductivité électrique, Haute pression, Zn, In2O3, 6855L, 8115C.
Wicri :
- concept : Zinc.

English descriptors

KwdEn :
- Cobalt additions, Codoping, Cold pressing, Electric resistivity, Electrical conductivity, High density, High pressure, Hot pressing, Indium additions, Indium oxide, Optimization, Sintering, Solid solutions, Solubility limit, Sputter deposition, Sputtering, Thin films, Tin additions, Tin oxide, Transparent thin film, Zinc, Zinc additions.

Abstract

Indium oxide co-doped with tin and zinc (ITZO) ceramics have been successfully prepared by direct sintering of the powders mixture at 1300 _°C. This allowed us to easily fabricate large highly dense target suitable for sputtering transparent conducting oxide (TCO) films, without using any cold or hot pressing techniques. Hence, the optimized ITZO ceramic reaches a high relative bulk density (∼ 92% of In₂O₃ theoretical density) and higher than the well-known indium oxide doped with tin (ITO) prepared under similar conditions. All X-ray diagrams obtained for ITZO ceramics confirms a bixbyte structure typical for In₂O₃ only. This indicates a higher solubility limit of Sn and Zn when they are co-doped into In₂O₃ forming a solid-solution. A very low value of electrical resistivity is obtained for [In₂O₃:Sn_0.1]:Zn_0.10 (1.7 x 10^-3 Ω cm, lower than ITO counterpart) which could be fabricated to high dense ceramic target suing pressure-less sintering.

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Pascal:12-0319956

Le document en format XML

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<author><name sortKey="Saadeddin, I" uniqKey="Saadeddin I">I. Saadeddin</name>
<affiliation><inist:fA14 i1="01"><s1>College of Sciences, An-Najah National University, PO Box 7</s1>
<s2>Nablus</s2>
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<author><name sortKey="Hilal, H S" uniqKey="Hilal H">H. S. Hilal</name>
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<author><name sortKey="Decourt, R" uniqKey="Decourt R">R. Decourt</name>
<affiliation wicri:level="3"><inist:fA14 i1="02"><s1>ICMCB, CNRS, Université Bordeaux 1, 87 avenue du Dr. A. Schweitzer</s1>
<s2>33608</s2>
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<country>France</country>
<placeName><region type="region" nuts="2">Aquitaine</region>
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<author><name sortKey="Campet, G" uniqKey="Campet G">G. Campet</name>
<affiliation wicri:level="3"><inist:fA14 i1="02"><s1>ICMCB, CNRS, Université Bordeaux 1, 87 avenue du Dr. A. Schweitzer</s1>
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<author><name sortKey="Pecquenard, B" uniqKey="Pecquenard B">B. Pecquenard</name>
<affiliation wicri:level="3"><inist:fA14 i1="02"><s1>ICMCB, CNRS, Université Bordeaux 1, 87 avenue du Dr. A. Schweitzer</s1>
<s2>33608</s2>
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<sZ>3 aut.</sZ>
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<country>France</country>
<placeName><region type="region" nuts="2">Aquitaine</region>
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</author>
</titleStmt>
<publicationStmt><idno type="inist">12-0319956</idno>
<date when="2012">2012</date>
<idno type="stanalyst">PASCAL 12-0319956 INIST</idno>
<idno type="RBID">Pascal:12-0319956</idno>
<idno type="wicri:Area/Main/Corpus">001A09</idno>
<idno type="wicri:Area/Main/Repository">001988</idno>
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<seriesStmt><idno type="ISSN">1293-2558</idno>
<title level="j" type="abbreviated">Solid state sci.</title>
<title level="j" type="main">Solid state sciences</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Cobalt additions</term>
<term>Codoping</term>
<term>Cold pressing</term>
<term>Electric resistivity</term>
<term>Electrical conductivity</term>
<term>High density</term>
<term>High pressure</term>
<term>Hot pressing</term>
<term>Indium additions</term>
<term>Indium oxide</term>
<term>Optimization</term>
<term>Sintering</term>
<term>Solid solutions</term>
<term>Solubility limit</term>
<term>Sputter deposition</term>
<term>Sputtering</term>
<term>Thin films</term>
<term>Tin additions</term>
<term>Tin oxide</term>
<term>Transparent thin film</term>
<term>Zinc</term>
<term>Zinc additions</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Oxyde d'indium</term>
<term>Addition indium</term>
<term>Oxyde d'étain</term>
<term>Addition cobalt</term>
<term>Zinc</term>
<term>Densité élevée</term>
<term>Couche mince</term>
<term>Frittage</term>
<term>Pulvérisation irradiation</term>
<term>Dépôt pulvérisation</term>
<term>Couche mince transparente</term>
<term>Pressage froid</term>
<term>Pressage chaud</term>
<term>Optimisation</term>
<term>Addition étain</term>
<term>Limite solubilité</term>
<term>Addition zinc</term>
<term>Codopage</term>
<term>Solution solide</term>
<term>Résistivité électrique</term>
<term>Conductivité électrique</term>
<term>Haute pression</term>
<term>Zn</term>
<term>In2O3</term>
<term>6855L</term>
<term>8115C</term>
</keywords>
<keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Zinc</term>
</keywords>
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</teiHeader>
<front><div type="abstract" xml:lang="en">Indium oxide co-doped with tin and zinc (ITZO) ceramics have been successfully prepared by direct sintering of the powders mixture at 1300 <sub>°</sub>
C. This allowed us to easily fabricate large highly dense target suitable for sputtering transparent conducting oxide (TCO) films, without using any cold or hot pressing techniques. Hence, the optimized ITZO ceramic reaches a high relative bulk density (∼ 92% of In<sub>2</sub>
O<sub>3</sub>
 theoretical density) and higher than the well-known indium oxide doped with tin (ITO) prepared under similar conditions. All X-ray diagrams obtained for ITZO ceramics confirms a bixbyte structure typical for In<sub>2</sub>
O<sub>3</sub>
 only. This indicates a higher solubility limit of Sn and Zn when they are co-doped into In<sub>2</sub>
O<sub>3</sub>
 forming a solid-solution. A very low value of electrical resistivity is obtained for [In<sub>2</sub>
O<sub>3</sub>
:Sn<sub>0.1</sub>
]:Zn<sub>0.10</sub>
 (1.7 x 10<sup>-3</sup>
 Ω cm, lower than ITO counterpart) which could be fabricated to high dense ceramic target suing pressure-less sintering.</div>
</front>
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<fA08 i1="01" i2="1" l="ENG"><s1>Indium oxide co-doped with tin and zinc: A simple route to highly conducting high density targets for TCO thin-film fabrication</s1>
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<fA11 i1="01" i2="1"><s1>SAADEDDIN (I.)</s1>
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<fA11 i1="02" i2="1"><s1>HILAL (H. S.)</s1>
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<fA11 i1="03" i2="1"><s1>DECOURT (R.)</s1>
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<fA11 i1="04" i2="1"><s1>CAMPET (G.)</s1>
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<fA11 i1="05" i2="1"><s1>PECQUENARD (B.)</s1>
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<fA14 i1="01"><s1>College of Sciences, An-Najah National University, PO Box 7</s1>
<s2>Nablus</s2>
<s3>PSE</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
</fA14>
<fA14 i1="02"><s1>ICMCB, CNRS, Université Bordeaux 1, 87 avenue du Dr. A. Schweitzer</s1>
<s2>33608</s2>
<s3>FRA</s3>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
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<fC01 i1="01" l="ENG"><s0>Indium oxide co-doped with tin and zinc (ITZO) ceramics have been successfully prepared by direct sintering of the powders mixture at 1300 <sub>°</sub>
C. This allowed us to easily fabricate large highly dense target suitable for sputtering transparent conducting oxide (TCO) films, without using any cold or hot pressing techniques. Hence, the optimized ITZO ceramic reaches a high relative bulk density (∼ 92% of In<sub>2</sub>
O<sub>3</sub>
 theoretical density) and higher than the well-known indium oxide doped with tin (ITO) prepared under similar conditions. All X-ray diagrams obtained for ITZO ceramics confirms a bixbyte structure typical for In<sub>2</sub>
O<sub>3</sub>
 only. This indicates a higher solubility limit of Sn and Zn when they are co-doped into In<sub>2</sub>
O<sub>3</sub>
 forming a solid-solution. A very low value of electrical resistivity is obtained for [In<sub>2</sub>
O<sub>3</sub>
:Sn<sub>0.1</sub>
]:Zn<sub>0.10</sub>
 (1.7 x 10<sup>-3</sup>
 Ω cm, lower than ITO counterpart) which could be fabricated to high dense ceramic target suing pressure-less sintering.</s0>
</fC01>
<fC02 i1="01" i2="3"><s0>001B80A15C</s0>
</fC02>
<fC02 i1="02" i2="3"><s0>001B60H55L</s0>
</fC02>
<fC03 i1="01" i2="X" l="FRE"><s0>Oxyde d'indium</s0>
<s5>01</s5>
</fC03>
<fC03 i1="01" i2="X" l="ENG"><s0>Indium oxide</s0>
<s5>01</s5>
</fC03>
<fC03 i1="01" i2="X" l="SPA"><s0>Indio óxido</s0>
<s5>01</s5>
</fC03>
<fC03 i1="02" i2="3" l="FRE"><s0>Addition indium</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="3" l="ENG"><s0>Indium additions</s0>
<s5>02</s5>
</fC03>
<fC03 i1="03" i2="X" l="FRE"><s0>Oxyde d'étain</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="X" l="ENG"><s0>Tin oxide</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="X" l="SPA"><s0>Estaño óxido</s0>
<s5>03</s5>
</fC03>
<fC03 i1="04" i2="3" l="FRE"><s0>Addition cobalt</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="3" l="ENG"><s0>Cobalt additions</s0>
<s5>04</s5>
</fC03>
<fC03 i1="05" i2="3" l="FRE"><s0>Zinc</s0>
<s2>NC</s2>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="3" l="ENG"><s0>Zinc</s0>
<s2>NC</s2>
<s5>05</s5>
</fC03>
<fC03 i1="06" i2="X" l="FRE"><s0>Densité élevée</s0>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="X" l="ENG"><s0>High density</s0>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="X" l="SPA"><s0>Densidad elevada</s0>
<s5>06</s5>
</fC03>
<fC03 i1="07" i2="3" l="FRE"><s0>Couche mince</s0>
<s5>07</s5>
</fC03>
<fC03 i1="07" i2="3" l="ENG"><s0>Thin films</s0>
<s5>07</s5>
</fC03>
<fC03 i1="08" i2="3" l="FRE"><s0>Frittage</s0>
<s5>08</s5>
</fC03>
<fC03 i1="08" i2="3" l="ENG"><s0>Sintering</s0>
<s5>08</s5>
</fC03>
<fC03 i1="09" i2="3" l="FRE"><s0>Pulvérisation irradiation</s0>
<s5>09</s5>
</fC03>
<fC03 i1="09" i2="3" l="ENG"><s0>Sputtering</s0>
<s5>09</s5>
</fC03>
<fC03 i1="10" i2="3" l="FRE"><s0>Dépôt pulvérisation</s0>
<s5>10</s5>
</fC03>
<fC03 i1="10" i2="3" l="ENG"><s0>Sputter deposition</s0>
<s5>10</s5>
</fC03>
<fC03 i1="11" i2="X" l="FRE"><s0>Couche mince transparente</s0>
<s5>11</s5>
</fC03>
<fC03 i1="11" i2="X" l="ENG"><s0>Transparent thin film</s0>
<s5>11</s5>
</fC03>
<fC03 i1="11" i2="X" l="SPA"><s0>Película transparente</s0>
<s5>11</s5>
</fC03>
<fC03 i1="12" i2="3" l="FRE"><s0>Pressage froid</s0>
<s5>12</s5>
</fC03>
<fC03 i1="12" i2="3" l="ENG"><s0>Cold pressing</s0>
<s5>12</s5>
</fC03>
<fC03 i1="13" i2="3" l="FRE"><s0>Pressage chaud</s0>
<s5>13</s5>
</fC03>
<fC03 i1="13" i2="3" l="ENG"><s0>Hot pressing</s0>
<s5>13</s5>
</fC03>
<fC03 i1="14" i2="3" l="FRE"><s0>Optimisation</s0>
<s5>14</s5>
</fC03>
<fC03 i1="14" i2="3" l="ENG"><s0>Optimization</s0>
<s5>14</s5>
</fC03>
<fC03 i1="15" i2="3" l="FRE"><s0>Addition étain</s0>
<s5>29</s5>
</fC03>
<fC03 i1="15" i2="3" l="ENG"><s0>Tin additions</s0>
<s5>29</s5>
</fC03>
<fC03 i1="16" i2="X" l="FRE"><s0>Limite solubilité</s0>
<s5>30</s5>
</fC03>
<fC03 i1="16" i2="X" l="ENG"><s0>Solubility limit</s0>
<s5>30</s5>
</fC03>
<fC03 i1="16" i2="X" l="SPA"><s0>Límite solubilidad</s0>
<s5>30</s5>
</fC03>
<fC03 i1="17" i2="3" l="FRE"><s0>Addition zinc</s0>
<s5>31</s5>
</fC03>
<fC03 i1="17" i2="3" l="ENG"><s0>Zinc additions</s0>
<s5>31</s5>
</fC03>
<fC03 i1="18" i2="X" l="FRE"><s0>Codopage</s0>
<s5>32</s5>
</fC03>
<fC03 i1="18" i2="X" l="ENG"><s0>Codoping</s0>
<s5>32</s5>
</fC03>
<fC03 i1="18" i2="X" l="SPA"><s0>Codrogado</s0>
<s5>32</s5>
</fC03>
<fC03 i1="19" i2="3" l="FRE"><s0>Solution solide</s0>
<s5>33</s5>
</fC03>
<fC03 i1="19" i2="3" l="ENG"><s0>Solid solutions</s0>
<s5>33</s5>
</fC03>
<fC03 i1="20" i2="3" l="FRE"><s0>Résistivité électrique</s0>
<s5>34</s5>
</fC03>
<fC03 i1="20" i2="3" l="ENG"><s0>Electric resistivity</s0>
<s5>34</s5>
</fC03>
<fC03 i1="21" i2="3" l="FRE"><s0>Conductivité électrique</s0>
<s5>35</s5>
</fC03>
<fC03 i1="21" i2="3" l="ENG"><s0>Electrical conductivity</s0>
<s5>35</s5>
</fC03>
<fC03 i1="22" i2="3" l="FRE"><s0>Haute pression</s0>
<s5>36</s5>
</fC03>
<fC03 i1="22" i2="3" l="ENG"><s0>High pressure</s0>
<s5>36</s5>
</fC03>
<fC03 i1="23" i2="3" l="FRE"><s0>Zn</s0>
<s4>INC</s4>
<s5>46</s5>
</fC03>
<fC03 i1="24" i2="3" l="FRE"><s0>In2O3</s0>
<s4>INC</s4>
<s5>47</s5>
</fC03>
<fC03 i1="25" i2="3" l="FRE"><s0>6855L</s0>
<s4>INC</s4>
<s5>65</s5>
</fC03>
<fC03 i1="26" i2="3" l="FRE"><s0>8115C</s0>
<s4>INC</s4>
<s5>71</s5>
</fC03>
<fN21><s1>247</s1>
</fN21>
</pA>
</standard>
</inist>
</record>

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Indium oxide co-doped with tin and zinc: A simple route to highly conducting high density targets for TCO thin-film fabrication

Indium oxide co-doped with tin and zinc: A simple route to highly conducting high density targets for TCO thin-film fabrication

Descripteurs français

English descriptors

Abstract

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